Controlling Na diffusion by rational design of Si-based layered architectures.

نویسندگان

  • Vadym V Kulish
  • Oleksandr I Malyi
  • Man-Fai Ng
  • Zhong Chen
  • Sergei Manzhos
  • Ping Wu
چکیده

By means of density functional theory, we systematically investigate the insertion and diffusion of Na and Li in layered Si materials (polysilane and H-passivated silicene), in comparison with bulk Si. It is found that Na binding and mobility can be significantly facilitated in layered Si structures. In contrast to the Si bulk, where Na insertion is energetically unfavorable, Na storage can be achieved in polysilane and silicene. The energy barrier for Na diffusion is reduced from 1.06 eV in the Si bulk to 0.41 eV in polysilane. The improvements in binding energetics and in the activation energy for Na diffusion are attributed to the large surface area and available free volume for the large Na cation. Based on these results, we suggest that polysilane may be a promising anode material for Na-ion and Li-ion batteries with high charge-discharge rates.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

تشکیل و ارزیابی ریزساختاری پوشش سیلیسیم آلومیناید حاصل از نفوذ هم‌زمان به‌روش سمانتاسیون جعبه‌ای در دمای بالا

In this study, creation of a silicon aluminide coating on IN738LC nickel-based superalloy has been investigated, using co-deposition process. Thermochemical calculations indicated the possibility of obtaining a silicon aluminide with NH4Cl activated pack powder at 900°C, in order to achieve coating with desirable structures. Two powder mixtures with nominal compositions of 7Si-14Al-(1-3) NH...

متن کامل

The effect of exogenous silicon on seed germination and seedling growth of wheat cultivars under salt stress conditions

ABSTRACT- Seed germination and early seedling growth are critical stages for plants establishment and production, particularly under salinity conditions. Exogenous application of silicon (Si) can enhance germination as well as seedling growth. In this experiment, the effect of priming with Si (0, 0.75, 1.5 and 2.25 mM sodium silicate) on seed germination and seedling growth under NaCl (0, 100 a...

متن کامل

Insights into Diffusion Mechanisms in P2 Layered Oxide Materials by First-Principles Calculations

Significant progress has been made in Na-intercalation compounds for rechargeable Na batteries. P2 NaxMO2 layered oxides have been shown to have high capacity, good cyclability, and improved rate capability. In this study, we investigate the diffusion mechanisms in P2 NaxCoO2 using ab initio molecular dynamics simulations and nudged elastic band calculations. We identify the Na diffusion mechan...

متن کامل

Fast discharge process of layered cobalt oxides due to high Na+ diffusion

Sodium ion secondary battery (SIB) is a low-cost and ubiquitous secondary battery for next-generation large-scale energy storage. The diffusion process of large Na(+) (ionic radius is 1.12 Å), however, is considered to be slower than that of small Li(+) (0.76 Å). This would be a serious disadvantage of SIB as compared with the Lithium ion secondary battery (LIB). By means of the electrochemical...

متن کامل

A Comparative Study on the Effect of Optical Illumination on Si1-xGex and Si based DDR IMPATT Diodes at W-Band

The effect of optical illumination on DC and dynamic performance of Si1-xGex based double drift region (DDR) (p+pnn+) IMPATT diode operating at W-Band is investigated and compared with its Silicon counterpart. Top Mounted (TM) and Flip Chip (FC) structures are chosen and the composition of photocurrent is altered by shining light on the p+ side and n+ side of the device through optical windows....

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical chemistry chemical physics : PCCP

دوره 16 9  شماره 

صفحات  -

تاریخ انتشار 2014